unisonic technologies co., ltd UT3414 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r502-248.e n-channel enhancement mode ? description the UT3414 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 50m ? @ v gs = 4.5v * r ds(on) < 63m ? @ v gs = 2.5v * r ds(on) < 87m ? @ v gs = 1.8v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT3414l-ae3-r UT3414g-ae3-r sot-23 s g d tape reel ? marking 34q l: lead free g: halogen free
UT3414 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-248.e ? absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current i d 4.2 a pulsed drain current i dm 15 a power dissipation p d 1.4 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient ja 100 125 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 20 v drain-source leakage current i dss v ds =16v, v gs =0v 1 a gate-source leakage current i gss v ds =0v, v gs =8v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.4 0.6 1 v on state drain current i d(on) v ds =5v, v gs =4.5v 15 a v gs =4.5v, i d =4.2a 41 50 v gs =2.5v, i d =3.7a 52 63 static drain-source on-resistance r ds(on) v gs =1.8v, i d =3.2a 67 87 m ? dynamic parameters input capacitance c iss 436 pf output capacitance c oss 66 pf reverse transfer capacitance c rss v ds =10v, v gs =0v, f=1.0mhz 44 pf switching parameters turn on delay time t d(on) 5.5 ns turn on rise time t r 6.3 ns turn off delay time t d(off) 40 ns turn off fall-time t f v ds =10v, v gs =5v, r l =2.7 ? r g =6 ? 12.7 ns total gate charge q g 6.2 nc gate source charge q gs 1.6 nc gate drain charge q gd v ds =10v, i d =4.2a, v gs =4.5v 0.5 nc source- drain diode ratings and characteristics diode forward voltage v sd v gs =0v, i s =1a 0.76 1 v maximum body-diode continuous current i s 2 a body diode reverse recovery time t rr i f =4a, di/dt=100a/ s 12.3 ns body diode reverse recovery charge q rr i f =4a, di/dt=100a/ s 3.5 nc
UT3414 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-248.e ? typical characteristics 200 0 0 200 drain current vs. source to drain voltage source to drain voltage,v sd (mv) 800 1000 400 600 400 600 800 1200 switching time waveforms v ds 90% 10% v gs t d(on) t thl t d(off) t tlh drain current, i d (a)
UT3414 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-248.e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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